A 0.1–5 GHz Cryogenic SiGe MMIC LNA

@article{Bardin2009A0G,
  title={A 0.1–5 GHz Cryogenic SiGe MMIC LNA},
  author={J. C. Bardin and Sander Weinreb},
  journal={IEEE Microwave and Wireless Components Letters},
  year={2009},
  volume={19},
  pages={407-409}
}
In this letter, the design and measurement of the first SiGe integrated-circuit LNA specifically designed for operation at cryogenic temperatures is presented. At room temperature, the circuit provides greater than 25.8 dB of gain with an average noise temperature (Te) of 76 K (NF = 1 dB) and S11 of -9 dB for frequencies in the 0.1-5 GHz band. At 15 K, the amplifier has greater than 29.6 dB of gain with an average Te of 4.3 K and S11 of -14.6 dB for frequencies in the 0.1-5 GHz range. To the… CONTINUE READING
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