A 0.65V embedded SDRAM with smart boosting and power management in a 45nm CMOS technology

Abstract

In this paper, an embedded SDRAM (eSDRAM) with smart boosting and power management (SB-PM) scheme for low power operation has been designed. SB-PM scheme decreases 40.3% of dynamic power and 69.1% of standby power consumption with ECC compared with the conventional scheme. A 266-Mb eSDRAM with SB-PM scheme is designed in a 45-nm CMOS technology showing 51.2-mW dynamic power and 2.05mW standby power consumption at VDD=0.65V and 85°C.

DOI: 10.1109/CICC.2012.6330622

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Cite this paper

@article{Pyo2012A0E, title={A 0.65V embedded SDRAM with smart boosting and power management in a 45nm CMOS technology}, author={Suk-Soo Pyo and Jun-Sung Kim and Jung-Han Kim and Hyun-Taek Jung and Tae-Joong Song and Cheol-Ha Lee and Gyun-Hong Kim and Young-Keun Lee and Kee-Sup Kim}, journal={Proceedings of the IEEE 2012 Custom Integrated Circuits Conference}, year={2012}, pages={1-4} }