A 0.18 μm CMOS X-Band Low Noise Amplifier for Space Applications

Abstract

A 7 GHz X-band low noise amplifier for space applications is designed using 0.18 µm UMC CMOS Mixed-Mode/RF technology. The LNA is designed for being tested at temperatures below 100 K (also called cryogenic temperatures) and under radiation. Inductively degenerated cascode topology is used and an extra bias inductor has been added to improve input… (More)

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Cite this paper

@article{Sahin2017A0, title={A 0.18 μm CMOS X-Band Low Noise Amplifier for Space Applications}, author={Nergiz Sahin and Mustafa Berke Yelten}, journal={2017 New Generation of CAS (NGCAS)}, year={2017}, pages={205-208} }