A 0.001mm<sup>2</sup> 100&#x00B5;W on-chip temperature sensor with &#x00B1;1.95 &#x00B0;C (3&#x03C3;) Inaccuracy in 32nm SOI CMOS

Abstract

We report an on-chip temperature sensor that uses the temperature-dependent reverse bias leakage current of a lateral SOI-CMOS pn diode to measure the thermal profile of a 32-nm microprocessor core. In this system, the diode junction capacitance is first charged to a fixed voltage. Subsequently, the diode capacitance is allowed to self-discharge by its… (More)

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Cite this paper

@article{Chowdhury2012A01, title={A 0.001mm2 100µW on-chip temperature sensor with ±1.95 °C (3σ) Inaccuracy in 32nm SOI CMOS}, author={Golam Chowdhury and Arjang Hassibi}, journal={2012 IEEE International Symposium on Circuits and Systems}, year={2012}, pages={1999-2002} }