99.992 % $^{28}$Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits.

@article{Mazzocchi201899992,
  title={99.992 % \$^\{28\}\$Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits.},
  author={Vincent Mazzocchi and Peter Sennikov and Andrey D. Bulanov and M. F. Churbanov and Bernard Bertrand and Louis Hutin and Jean Paul Barnes and Mikhail Drozdov and J. M. Hartmann and Marc Sanquer},
  journal={arXiv: Materials Science},
  year={2018},
  pages={1-7}
}
  • Vincent Mazzocchi, Peter Sennikov, +7 authors Marc Sanquer
  • Published 2018
  • Chemistry, Physics
  • arXiv: Materials Science
  • Silicon-based quantum bits with electron spins in quantum dots or nuclear spins on dopants are serious contenders in the race for quantum computation. Added to process integration maturity, the lack of nuclear spins in the most abundant $^{28}$silicon isotope host crystal for qubits is a major asset for this silicon quantum technology. We have grown $^{28}$silicon epitaxial layers (epilayers) with an isotopic purity greater than 99.992 % on 300mm natural abundance silicon crystals. The quality… CONTINUE READING

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