92–96 GHz GaN power amplifiers

@article{Micovic20129296GG,
  title={92–96 GHz GaN power amplifiers},
  author={Miro Micovic and Ara Kurdoghlian and Alexandros D. Margomenos and D. F. Brown and Keisuke Shinohara and Shawn D. Burnham and Ivan Milosavljevic and R. L. Bowen and A. Williams and Paul Hashimoto and Robert Grabar and Colleen M. Butler and Adele E. Schmitz and P. J. Willadsen and D. Chow},
  journal={2012 IEEE/MTT-S International Microwave Symposium Digest},
  year={2012},
  pages={1-3}
}
We report the test results of a family of 92-96 GHz GaN power amplifiers (PA) with increasing gate peripheries (150 µm to 1200 µm). The 1200 µm, 3-stage PA produces 2.138 W output power (Pout) with an associated PAE of 19% at 93.5 GHz (VD=14V). The amplifier offers Pout over 1.5W with associated PAE over 17.8% in the 92–96 GHz bandwidth. The measured data show that the maximum Pout scales linearly with increasing gate periphery at an almost constant PAE around 20%. This demonstrates the high… CONTINUE READING
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