90nm SiGe BiCMOS analog front-end circuits for 80GHz bandwidth large-swing transmitters


An 80GHz bandwidth distributed amplifier with 7V<sub>pp</sub> differential output swing and P<sub>O1dB</sub> of 13 dBm per side, a 125GHz bandwidth PIN-diode SPST switch with 23dBm output compression point and over 22 dB of isolation up to 160 GHz, and a 40-100GHz bandpass filter with less than 3dB insertion loss are reported in a 90nm SiGe BiCMOS process… (More)


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