9.1 A 13mm2 40nm multiband GSM/EDGE/HSPA+/TDSCDMA/LTE transceiver

  title={9.1 A 13mm2 40nm multiband GSM/EDGE/HSPA+/TDSCDMA/LTE transceiver},
  author={Theodore Georgantas and Kostis Vavelidis and Nikos Haralabidis and Stamatis Bouras and Iason Vassiliou and Charalampos Kapnistis and Yiannis Kokolakis and Hamed Peyravi and Gerasimos Theodoratos and Konstantinos S. Vryssas and Nikos Kanakaris and Christos Kokozidis and Spyros Kavvadias and Sofoklis Plevridis and Paul Mudge and Igor Elgorriaga and Aris Kyranas and Spyridon Liolis and Eleni Kytonaki and Giorgos Konstantopoulos and Pavlos Robogiannakis and Kosmas Tsilipanos and Michael Margaras and Panagiotis Betzios and Rahul Magoon and Nias Bouras and Maryam Rofougaran and Reza Rofougaran},
  journal={2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers},
To support increased device functionality and higher data-rates in LTE-enabled systems, while improving user experience and usage time, there is a need to reduce RFIC size and power consumption without degrading performance, while maintaining backward compatibility with legacy 2G/3G systems [1]. This paper introduces a 13mm2, 40nm CMOS 2G/HSPA+/TDSCDMA/UE cat. 4 transceiver that consumes 36/65mA battery-referenced current in 3G/LTE20 modes (B1, -50dBm TX, -60dBm RX). This is achieved in part by… CONTINUE READING


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