9.1: 40 Inch FHD AM‐OLED Display with IR Drop Compensation Pixel Circuit

@article{Kim2009914I,
  title={9.1: 40 Inch FHD AM‐OLED Display with IR Drop Compensation Pixel Circuit},
  author={Yangsun Kim and Won-Kyu Kwak and Jae Yong Lee and Wong Sik Choi and Ki Yong Lee and Sung C. Kim and Eui Jin Yoo},
  journal={SID Symposium Digest of Technical Papers},
  year={2009},
  volume={40}
}
Samsung Mobile Display has developed a full color 40″ FHD AM‐OLED display, the largest OLED display ever reported to data. It was based on the technologies of Low temperature poly‐Silicon (LTPS) TFT backplane using Super Grain Silicon (SGS) crystallization method, and power line IR‐drop cancellation pixel circuit. Through this designed panel, we can estimate the possibility of large‐Size and high‐resolution AMOLED panel as TV applications. 
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References

SHOWING 1-10 OF 10 REFERENCES
16.1: Invited Paper: Alternative Approach to Large‐Size AMOLED HDTV
In this work, we propose alternative approaches to existing technologies for fabrication of large‐size HDTV employing AMOLED, such as LITI for OLED patterning and non‐ELA crystallization methods for
Alternative approach to large‐sized AMOLED HDTV
Abstract— In this work, alternative approaches to existing technologies for the fabrication of large‐sized AMOLEDs, such as non‐laser crystallization methods for poly‐Si TFT fabrication and color
The impact of the transient response of organic light emitting diodes on the design of active matrix OLED displays
  • R. Dawson, Z. Shen, J. Sturm
  • Physics
    International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
  • 1998
Much of the organic light emitting diode (OLED) characterization published to date addresses the high current regime encountered in the operation of passively addressed displays. Higher efficiency
Polysilicon TFT technology for active matrix OLED displays
The integration of active matrix polysilicon TFT technology with organic light emitting diode (OLED) displays has been investigated with the goal of producing displays of uniform brightness. This
Liquid Crystal Displays: Addressing Schemes and Electro-Optical Effects
In this second edition of Liquid Crystal Displays, Ernst Lueder provides a timely update to his successful text. His unique combination of theory and practice presents all the information required
Low‐temperature poly‐Si TFT transferred onto plastic substrates by using surface free technology by laser ablation/annealing (SUFTLA®)
A novel technology that makes it possible to transfer electronic devices from an original substrate to another substrate is introduced. Because laser irradiation is utilized during the transfer
Liquid Crystal Displays: Addressing Schemes and Electro-Optical Effects (Wiley
  • New York,
  • 2001
Driving and System Considerations of PM and AM-OLEDs
  • IMID ’02 Tech. Dig., 2003, pp. 963-968
  • 2003
Reduction of Control Signal Lines in VTH Variation Compensation Scheme of AM-OLED Driving Circuit
  • IDW ’01 Tech. Dig., 2001, pp. 1727-1728
  • 2001