9 kV, 1 cm×1 cm SiC super gto technology development for pulse power

@article{Agarwal20099K1,
  title={9 kV, 1 cm×1 cm SiC super gto technology development for pulse power},
  author={A. K. Agarwal and Craig Capell and Qingchun Jon Zhang and Jim Richmond and Robert Callanan and M. O'loughlin and Al Burk and J. Melcher and J. W. Palmour and Victor Temple and Heather O'Brien and C. J. Scozzie},
  journal={2009 IEEE Pulsed Power Conference},
  year={2009},
  pages={264-269}
}
Power devices made on Silicon Carbide (SiC) are expected to offer significant advantages over silicon due to the unique material properties. With the continuing improvement in both material quality (defect density and carrier lifetime) and SiC device fabrication process, SiC power devices are increasingly fabricated with higher blocking rating and larger die size. This paper describes the benefits of using SiC Gate Turn-Off thyristors (GTO) in power electronics, especially for pulse power… CONTINUE READING
10 Citations
10 References
Similar Papers

Citations

Publications citing this paper.
Showing 1-10 of 10 extracted citations

References

Publications referenced by this paper.
Showing 1-10 of 10 references

Silicon Carbide Hot-Wall Epitaxy for Large-Area, High-Voltage Devices

  • M. O’Loughlin, K. Irvine, +5 authors Jr.
  • Mater. Res. Soc. Symp. Proc. Vol
  • 2008
1 Excerpt

Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation

  • K. Danno, D. Nakamura, T. Kimoto
  • Appl. Phys. Lett. 90, 202109
  • 2007

Lifetime - limiting defects in n – 4 HSiC epilayers ”

  • B. V. Shanabrook, S. W. Huh, A. Y. Polyakov, M. Skowronski, J. J. Sumakeris, M. J.'Loughlin
  • Appl . Phys . Lett .
  • 2007

J

  • P. B. Klein, B. V. Shanabrook, S. W. Huh, A. Y. Polyakov, M. Skowronski
  • J. Sumakeris and M. J. 'Loughlin, “Lifetime…
  • 2006

SiC Power Switching Devices – the Second Electronics Revolution?

  • J. A. Cooper, A. K. Agarwal
  • Proc. IEEE, 90, 956-968
  • 2002
1 Excerpt

and S

  • A. K. Agarwal, P. A. Ivanov, M. E. Levinshtein, J. W. Palmour
  • L. Rumyantsev "Dynamic Performance of GTO…
  • 2001
1 Excerpt

ThinPak Technology Shrinks Power Modules, Power Hybrids and Ultra-High Speed Switching Devices

  • V. Temple
  • (Courtesy: Drs. J. Caldwell and R. Stahlbush at…
  • 2000

and J

  • P. A. Ivanov, M. E. Levinshtein, S. L. Rumyantsev, A. K. Agarwal
  • W. Palmour "Turn-Off Operation of a MOS-Gate 2.6…
  • 2000
1 Excerpt

Similar Papers

Loading similar papers…