820 mV open-circuit voltages from Cu 2 O / CH 3 CN junctions †

@inproceedings{Xiang2010820MO,
  title={820 mV open-circuit voltages from Cu 2 O / CH 3 CN junctions †},
  author={Chengxiang Xiang and Gregory M. Kimball and Ronald L Grimm and Bruce S Brunschwig and Harry A. Atwater and Nathan S. Lewis},
  year={2010}
}
P-Type cuprous oxide (Cu2O) photoelectrodes prepared by the thermal oxidation of Cu foils exhibited open-circuit voltages in excess of 800 mV in nonaqueous regenerative photoelectrochemical cells. In contact with the decamethylcobaltocene (Me10CoCp2 ) redox couple, cuprous oxide yielded opencircuit voltage, Voc, values of 820 mV and short-circuit current density, Jsc, values of 3.1 mA cm 2 under simulated air mass 1.5 illumination. The energy-conversion efficiency of 1.5% was limited by… CONTINUE READING
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