81 GHz gain-bandwidth product silicon hetero-interface photodetector

Summary form only given. We have fabricated and tested avalanche photodetectors operating in the wavelength range between 1.O and 1.65 /spl mu/m that use separate InGaAs absorption and Si multiplication regions bonded through wafer fusion. Directly integrating InGaAs and Si layers in an avalanche photodetector combines the infrared absorption capabilities… CONTINUE READING