70% TMR at room temperature for SDT sandwich junctions with CoFeB as free and reference Layers

@article{Wang200470TA,
  title={70% TMR at room temperature for SDT sandwich junctions with CoFeB as free and reference Layers},
  author={Dexin Wang and C. Nordman and J. Daughton and Zhenghong Qian and J. Fink},
  journal={IEEE Transactions on Magnetics},
  year={2004},
  volume={40},
  pages={2269-2271}
}
Spin dependent tunneling (SDT) wafers were deposited using dc magnetron sputtering. SDT junctions were patterned and connected with one layer of metal lines using photolithography techniques. These junctions have a typical stack structure of Si(100)-Si/sub 3/N/sub 4/-Ru-CoFeB-Al/sub 2/O/sub 3/-CoFeB-Ru-FeCo-CrMnPt with the antiferromagnet CrMnPt layers for pinning at the top. High-resolution transmission electron microscopy (HRTEM) reveals that the CoFeB has an amorphous structure and a smooth… Expand
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