• DOI:10.1109/TMAG.2004.830219
Corpus ID: 20439632

70% TMR at room temperature for SDT sandwich junctions with CoFeB as free and reference Layers

@article{Wang200470TA,
  title={70% TMR at room temperature for SDT sandwich junctions with CoFeB as free and reference Layers},
  author={Dexin Wang and C. Nordman and J. Daughton and Zhenghong Qian and J. Fink},
  journal={IEEE Transactions on Magnetics},
  year={2004},
  volume={40},
  pages={2269-2271}
}

• Dexin Wang, C. Nordman, +2 authors J. Fink
• Published 2004
• Physics
• IEEE Transactions on Magnetics

Spin dependent tunneling (SDT) wafers were deposited using dc magnetron sputtering. SDT junctions were patterned and connected with one layer of metal lines using photolithography techniques. These junctions have a typical stack structure of Si(100)-Si/sub 3/N/sub 4/-Ru-CoFeB-Al/sub 2/O/sub 3/-CoFeB-Ru-FeCo-CrMnPt with the antiferromagnet CrMnPt layers for pinning at the top. High-resolution transmission electron microscopy (HRTEM) reveals that the CoFeB has an amorphous structure and a smooth… Expand

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