670 GHz power amplifier development at Northrop Grumman

  title={670 GHz power amplifier development at Northrop Grumman},
  author={J. C. Tucek and M. A. Basten and D. A. Gallagher and K. E. Kreischer},
  journal={2011 Abstracts IEEE International Conference on Plasma Science},
Northrop Grumman Electronic Systems (NGES) is developing compact, efficient sources above 100 GHz as part of the DARPA THz Electronics (THzE) program. The THzE Phase I goal is a high duty amplifier producing 100 mW of RF power at 670 GHz. These devices will use advanced, high current density cathodes, a folded waveguide as the slow-wave circuit, and a depressed collector for overall device efficiency. Operation at duty cycles of 50–100% is anticipated. Realization of fully-integrated high power… CONTINUE READING