65nm Cu Integration and Interconnect Reliability in Low Stress K=2.75 SiCOH


A low tensile stress SiCOH dielectric with K=2.15 has been developed for implementation in the 2times and 4times fatwire levels for enhanced RC performance in the 65nm technology node. Integration challenges related to mechanical integrity and process-induced damage were successfully overcome. Yield and interconnect reliability metrics comparable to dense K… (More)

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@article{McGahay200665nmCI, title={65nm Cu Integration and Interconnect Reliability in Low Stress K=2.75 SiCOH}, author={V. McGahay and Griselda Bonilla and F. Chen and C. Christiansen and S. Cohen and M. Cullinan-Scholl and J. J. Demarest and Don Dunn and B. Engel and Joan Fitzsimmons and J. Gill and Stephan Grunow and B J Herbst and Heifa Hichri and Katsumi Ida and N. Klymko and M. Kiene and Cathy Labelle and T. Lee and E. Liniger and X. H. Liu and Anuj Madan and K. Malone and J. Martin and P. V. McLaughlin and Prof. Dr. Seigo Minami and Steven Molis and Chris Muzzy and S. Nguyen and J. K. Patel and Darryl Restaino and Atsuo Sakamoto and T. M. Shaw and Yukiko Shimooka and Hosadurga Shobha and E. Simonyi and Johannes Widodo and Alfred Grill and R. Hannon and M. R. Lane and Howard L.M. Nye and T H Spooner and Robert L. Wisnieff and Thomas Ivers}, journal={2006 International Interconnect Technology Conference}, year={2006}, pages={9-11} }