650V and 900V, 150A SiC Schottky diode for automotive applications

Abstract

650V and 900V, 150A SiC Schottky diodes have been manufactured on 150mm SiC wafers using a high yielding Schottky diode process developed in an automotive qualified Si foundry. The 900V diodes have a forward voltage drop of 1.65V at 150A, a breakdown voltage of 1100V at 250uA and leakage current of 600nA at 900V. A 30% reduction in yield is observed with… (More)

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Cite this paper

@article{Chatty2016650VA9, title={650V and 900V, 150A SiC Schottky diode for automotive applications}, author={Kiran V. Chatty and Sujit Banerjee and Kevin S. Matocha}, journal={2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)}, year={2016}, pages={143-146} }