650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric

@article{Hua2015650VGM,
  title={650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric},
  author={Mengyuan Hua and Cheng Qiang Liu and Shu Yang and Shenghou Liu and Yunyou Lu and Kai Fu and Zhihua Dong and Yong Cai and Baoshun Zhang and Kevin J. Chen},
  journal={2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)},
  year={2015},
  pages={241-244}
}
In this work, silicon nitride (SiNx) film deposited at 780 °C by low pressure chemical vapor deposition (LPCVD) was employed as the passivation layer and gate dielectric for GaN-based MIS-HEMTs. The LPCVD-SiNx/AlGaN/GaN MIS-HEMTs exhibit suppressed current collapse, small gate leakage current at both reverse and forward gate bias, high forward gate breakdown voltage and high time dependent gate dielectric reliability.