60nm collector InGaAs/InP Type-I DHBTs demonstrating 660 GHz fT, BVCEO = 2.5V, and BVCBO = 2.7V

Abstract

We report InP/InGaAs/InP double heterojunction bipolar transistors (DHBT) fabricated using a conventional mesa structure. The devices employ a 14 nm highly doped InGaAs base and a 60 nm InP collector containing an InGaAs/InAlAs superlattice grade. Devices employing a 400 nm emitter exhibit a maximum fT = 660 GHz with a 218 GHz f max - this is a record fT… (More)

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