60 and 77GHz Power Amplifiers in Standard 90nm CMOS

@article{Suzuki200860A7,
  title={60 and 77GHz Power Amplifiers in Standard 90nm CMOS},
  author={Toshihide Suzuki and Yoichi Kawano and Masaru Sato and Tatsuya Hirose and Kazukiyo Joshin},
  journal={2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers},
  year={2008},
  pages={562-636}
}
This paper describes the implementation of 60 and 77GHz PAs in standard 90nm CMOS technology. An accurate transistor model is developed that enables designing circuits operating at frequencies up to 80GHz. The circuits are designed with a unique matching topology for reducing the RF signal loss in matching networks. 
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