6.2: Optimizing osmium-ruthenium films to inhibit tungsten interdiffusion

  title={6.2: Optimizing osmium-ruthenium films to inhibit tungsten interdiffusion},
  author={Phillip D. Swartzentruber and Wen-Chung Li and Thomas John Balk and Sterling Roberts},
  journal={2010 IEEE International Vacuum Electronics Conference (IVEC)},
Osmium-ruthenium thin films were deposited on porous tungsten pellets, at the same time as cathode assemblies, to investigate possibilities for minimizing interdiffusion. Previous studies had identified promising film characteristics for inhibiting tungsten interdiffusion. For example, it was found that a 5W-substrate-biased film of 550 nm thickness exhibited high structural and compositional stability, and several other films exhibited promising properties as well. These films were produced… CONTINUE READING


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