56 Gb/s Germanium Waveguide Electro-Absorption Modulator

@article{Srinivasan201656GG,
  title={56 Gb/s Germanium Waveguide Electro-Absorption Modulator},
  author={Srinivasan Ashwyn Srinivasan and Marianna Pantouvaki and Shashank Gupta and Hong Tao Chen and Peter Verheyen and Guy Lepage and Gunther Roelkens and Krishna C. Saraswat and Dries Van Thourhout and Philippe Absil and Joris Van Campenhout},
  journal={Journal of Lightwave Technology},
  year={2016},
  volume={34},
  pages={419-424}
}
We report a Germanium waveguide electro-absorption modulator with electro-optic bandwidth substantially beyond 50 GHz. The device is implemented in a fully integrated Si photonics platform on 200 mm silicon-on-insulator wafers with 220 nm top Si thickness. Wide open eye diagrams are demonstrated at 1610 nm operation wavelength for nonreturn-to-zero on-off keying (NRZ-OOK) modulation at data rates as high as 56 Gb/s. Dynamic extinction ratios up to 3.3 dB are obtained by applying drive voltages… CONTINUE READING
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