52.4L: Late-News Paper: a-Si:H TFT Active-Matrix Phosphorescent OLED Pixel

@inproceedings{Nichols2002524LLP,
  title={52.4L: Late-News Paper: a-Si:H TFT Active-Matrix Phosphorescent OLED Pixel},
  author={James Andrew Nichols and Thomas N. Jackson and Min Hua Lu and Madelaine Hack},
  year={2002}
}
We report a two-transistor amorphous silicon (a-Si:H) thin film transistor (TFT) active-matrix organic light emitting diode (OLED) pixel using high-efficiency phosphorescent OLED devices. The gate to source voltage (VGS) for the OLED drive transistor is less than 8 V for a pixel brightness of 100 cd/m2 and less than 12 V for 400 cd/m2. The low drive voltage is important for good TFT stability and display uniformity.