50-nm Metamorphic High-Electron-Mobility Transistors With High Gain and High Breakdown Voltages

@article{Xu200950nmMH,
  title={50-nm Metamorphic High-Electron-Mobility Transistors With High Gain and High Breakdown Voltages},
  author={Dong Xu and W M T Kong and Xiaoping Yang and Lee Mohnkern and Philip Seekell and Louis M. Mt Pleasant and K. H. George Duh and P. M. Smith and Pane-Chane Chao},
  journal={IEEE Electron Device Letters},
  year={2009},
  volume={30},
  pages={793-795}
}
We report the design, fabrication, and characterization of ultrahigh-gain metamorphic high-electron-mobility transistors (MHEMTs) with significantly enhanced breakdown performance. In this letter, an asymmetrically recessed 50-nm Gamma-gate process has been successfully applied to epitaxial designs with double-sided-doped InAs-layer-inserted channels grown… CONTINUE READING