50 TO 70 GHz InP/InGaAs HBT AMPLIFIER WITH 20 dB GAIN

Abstract

In this paper the design and a complete characterization of an InP/InGaAs single heterojunction bipolar (SHBT) mm-wave amplifier is described. The circuit is designed for the 60 GHz band allocated for wireless LAN and mobile communications. The amplifier achieves a gain of 20 dB from 50 GHz to 70 GHz. Beside S-parameter noise and gain compression… (More)

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Cite this paper

@inproceedings{Morf199950T7, title={50 TO 70 GHz InP/InGaAs HBT AMPLIFIER WITH 20 dB GAIN}, author={Thomas Morf and Dieter Huber and Alex Huber and Volker Schwarz and Heinz J{\"a}ckel}, year={1999} }