4Gbit density STT-MRAM using perpendicular MTJ realized with compact cell structure

@article{Chung20164GbitDS,
  title={4Gbit density STT-MRAM using perpendicular MTJ realized with compact cell structure},
  author={S.-W. Chung and Takayuki Kishi and Junghoon Park and Masayoshi Yoshikawa and K. S. Park and Tetsuro Nagase and Kazumasa Sunouchi and Hiroshi Kanaya and Guk Cheon Kim and K.. Noma and Myung-Shik Lee and Akihito Yamamoto and K. M. Rho and Kazuki Tsuchida and Joo Yong Yi and Hyeon Soo Kim and Y. Chun and Hisato Oyamatsu and S. J. Hong},
  journal={2016 IEEE International Electron Devices Meeting (IEDM)},
  year={2016},
  pages={27.1.1-27.1.4}
}
For the first time, 4Gbit density STT-MRAM using perpendicular MTJ in compact cell was successfully demonstrated through the tight distributions for resistance and magnetic properties. This paper includes the results regarding parasitic resistance control process, MTJ process, and MTJ stack engineering. Both of successful 4Gb read and write operations were performed with high TMR, low Ic. This result will brighten the prospect of high-density STT-MRAM. 
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High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs

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