44-GHz monolithic GaAs FET amplifier

@article{Kim198644GHzMG,
  title={44-GHz monolithic GaAs FET amplifier},
  author={B. Kim and H. Q. Tserng and H N Shih},
  journal={IEEE Electron Device Letters},
  year={1986},
  volume={7},
  pages={95-97}
}
Millimeter-wave monolithic GaAs FET amplifiers have been developed. These amplifiers were fabricated using FET's with MBE-grown active layers and electron-beam defined sub-half-micrometer gates. Source groundings are provided through very low inductance via holes. The single-stage amplifier has achieved over a 10-dB gain at 44 GHz. A 300-µm gate-width amplifier has achieved an output power of 60 mW with a power density of 0.2 W per millimeter of gate width. 

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Fabrication of n + ledge channel structure for GaAs FET’s with a single lithography step,

  • R. D. Hudgens
  • E/ectron. Lett., vol. 21,
  • 1985

Ultrahigh Frequency Operation of Ion - Implanted GaAs Metal - Semi - conductor Field - Effect Transistors

  • H. Q. Tserng Kim, H. D. Shih
  • Appl . Phys . Lett .
  • 1984

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