44-GHz monolithic GaAs FET amplifier

  title={44-GHz monolithic GaAs FET amplifier},
  author={B. Kim and H. Q. Tserng and H N Shih},
  journal={IEEE Electron Device Letters},
Millimeter-wave monolithic GaAs FET amplifiers have been developed. These amplifiers were fabricated using FET's with MBE-grown active layers and electron-beam defined sub-half-micrometer gates. Source groundings are provided through very low inductance via holes. The single-stage amplifier has achieved over a 10-dB gain at 44 GHz. A 300-µm gate-width amplifier has achieved an output power of 60 mW with a power density of 0.2 W per millimeter of gate width. 


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