40-Gbps direct modulation of 1.55-µm AlGaInAs semi-insulating buried-heterostructure distributed reflector lasers up to 85°C

@article{Uetake200940GbpsDM,
  title={40-Gbps direct modulation of 1.55-µm AlGaInAs semi-insulating buried-heterostructure distributed reflector lasers up to 85°C},
  author={Ayahito Uetake and Koji Otsubo and Manabu Matsuda and Shigekazu Okumura and Mitsuru Ekawa and Takahiko Yamamoto},
  journal={2009 IEEE LEOS Annual Meeting Conference Proceedings},
  year={2009},
  pages={839-840}
}
1.55-mum AlGaInAs semi-insulating buried-heterostructure distributed reflector lasers with 75-mum-long active region achieved very high slope values of relaxation oscillation frequency of 4.5 (25degC) and 3.5 GHz/mA1/2 (85degC), which realized 40-Gbps direct modulation up to 85degC. 

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Re la tiv e I nt en sit y R el at iv e In te ns it Re la tiv e I nt en sit y 20 dB 25oC 5 mW

K. Otsubo
Proc. Optical Fiber Communication, • 2009
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