4-Mb MOSFET-selected phase-change memory experimental chip

@article{Bedeschi20044MbMP,
  title={4-Mb MOSFET-selected phase-change memory experimental chip},
  author={Ferdinando Bedeschi and R. Bez and Chiara Boffino and Edoardo Bonizzoni and E. Buda and Giulio Casagrande and Lu{\'i}s Costa and Mena Ferraro and Roberto Gastaldi and Osama Khouri and François-Ga{\"e}l Ottogalli and F. Pellizzer and A. Pirovano and Claudio Resta and Guido Torelli and Milorad To{\vs}i},
  journal={Proceedings of the 30th European Solid-State Circuits Conference},
  year={2004},
  pages={207-210}
}
This paper presents a 4-Mb phase-change memory experimental chip using an MOS transistor as a cell selector. A cascode bit-line biasing scheme allows read and write voltages to be fed to the storage element with adequate accuracy. The chip was integrated with 3-V 0.18-/spl mu/m CMOS technology and experimentally evaluated. A read access time of 45 ns was measured together with a write throughput of 5 MB/s, which represents an improved performance as compared to present NOR Flash memories. Cell… CONTINUE READING
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References

Publications referenced by this paper.
Showing 1-5 of 5 references

A 0.18 pm 3.0 V 64Mb non-volatilc phase-transition random-access memory (PRAM)

H.-S. Jung, K. Kim
IEEE SolidStore Circuit5 Confemme Dip Tech. Pop., • 2004

Ovonic unified memory - a high-performance nonvolatile memory technology for stand-alone memory and embedded applications

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) • 2002

Nonvolatile, high density, high performance phase-change memory

S. Tyson, G . Wicker, T. Lowrey, S . Hudgens, K. Hunt
IEEE Aerospoce Conference, • 2000

Novel ptreneh phase - change memory cell for embedded and stand - alone non - volatile memory applications ” , to appear in Proe 2004 Symposium on VLSl Technology

A. Pirovano F. Pelliuer, F. Onvgalli, +15 authors R. Bez
-1

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