3D simulation of effect on BJT with microwave pulses injected from base

Abstract

By means of Technology Computer Aided Design (TCAD), we established a 3D simulation model of effect on NPN type Bipolar Junction Transistor (BJT) with microwave pulses injected from base. The physical process of transistor effect with microwave pulses injected from base is studied on the basis of the distribution of electric field, current density and… (More)

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