3D parallel simulation of InP/InGaAs HBT

Abstract

We have developed a numerical modeling to simulate abrupt heterojunction bipolar transistors (HBT) based on the finite element method (FEM) approach. We have implemented this formulation in a 3D parallel simulator and we have applied it to study InP/InGaAs HBT. For this type of transistors it is necessary to take into account that on both sides of the… (More)

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