3D WL MEMS with TSV last technology's mechanical analysis

@article{Lee20173DWM,
  title={3D WL MEMS with TSV last technology's mechanical analysis},
  author={Hsiao-Yen Lee and Chin-Cheng Kuo and Chung-Ting Wang and Ying-Chih Lee and M. H. Chen and Hsin-Lu Tarng and C. P. Hung},
  journal={2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)},
  year={2017},
  pages={1380-1383}
}
The through-silicon-via (TSV) technology is one of the most effective approaches to fulfill the form factor, profile, performance, and 3D interconnect demand of next generation handheld and wearable electronics. This paper introduces two structures of TSV LAST technology, standard flow and short flow. The standard flow TSV LAST structure shows better… CONTINUE READING