• Physics, Computer Science
  • Published in ArXiv 2014

3D Vertical Dual-Layer Oxide Memristive Devices for Neuromorphic Computing

@article{Gaba20143DVD,
  title={3D Vertical Dual-Layer Oxide Memristive Devices for Neuromorphic Computing},
  author={Siddharth Gaba and Patrick Sheridan and Chao Du and Wei D. Lu},
  journal={ArXiv},
  year={2014},
  volume={abs/1404.1158}
}
Dual-layer resistive switching devices with horizontal W electrodes, vertical Pd electrodes and WOx switching layer formed at the sidewall of the horizontal electrodes have been fabricated and characterized. The devices exhibit well-characterized analog switching characteristics and small mismatch in electrical characteristics for devices formed at the two layers. The three-dimensional (3D) vertical device structure allows higher storage density and larger connectivity for neuromorphic… CONTINUE READING

References

Publications referenced by this paper.
SHOWING 1-10 OF 15 REFERENCES

Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application

VIEW 5 EXCERPTS
HIGHLY INFLUENTIAL

Memristive devices for computing.

VIEW 1 EXCERPT

Realization of vertical resistive memory (VRRAM) using cost effective 3D process

VIEW 1 EXCERPT