• Corpus ID: 62780117

3D Integration Technology and Heterogeneous Integration

@inproceedings{Koyanagi20113DIT,
  title={3D Integration Technology and Heterogeneous Integration},
  author={Mitsumasa Koyanagi and Takafumi Fukushima and Kang-wook Lee and Tetsu Tanaka},
  year={2011}
}
あらまし これまで,LSI は,半導体素子の微細化により,著しい速度で高性能化,大容量化が達成されてき た.しかし,消費電力の増大や特性ばらつきの増加などにより微細化が次第に難しくなってきている.これらの 問題を解決するためには,素子の微細化だけでなく,LSI に実装技術や MEMS 技術,フォトニクス技術などの 異種技術を融合して,システム全体で高性能化,高機能化を図る新しい集積化技術が必要となる.したがって, 今後の LSI 開発は,素子の微細化を更に進める More Moore 技術と,異種技術を融合する More than Moore 技術を車の両輪のようにうまく協調,共存させながら進めていくことが重要になる.本論文では,More than Moore技術を代表する技術の一つである三次元集積化技術とヘテロインテグレーション技術について,現状の課 題と将来の可能性について言及する. キーワード 三次元 LSI,シリコン貫通配線(TSV),マイクロバンプ,セルフアセンブリー,ヘテロインテ グレーション 
1 Citations
High Speep/High-Precision Chip Joining Using Self-Assembly Technology for Three-Dimensional Integrated Circuits
Moore의 법칙으로 알려져 있듯이, 지금까지 LSI는 미세가공기술의 진보에 따른 반도체소자의 미세화를 통해 2-3년에 4배라는 놀라운 속도로 고성능화, 대용량화가 달성되어져 왔다. 그러나 반도체 소자의 미세화가 11 nm node 이하로 진행됨에 따른 누설전류(Leakage Current)의 증가, 특성 불균형의 증가, 소비전력의 증대 및 노광장치등의

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