35 nm metamorphic HEMT MMIC technology

@article{Leuther200835NM,
  title={35 nm metamorphic HEMT MMIC technology},
  author={Arnulf Leuther and Axel Tessmann and Hermann Massler and Ross Losch and Michael Schlechtweg and Michael Mikulla and Oliver Ambacher},
  journal={2008 20th International Conference on Indium Phosphide and Related Materials},
  year={2008},
  pages={1-4}
}
A metamorphic high electron mobility transistor (mHEMT) technology featuring 35 nm gate length has been developed. The optimized MBE grown layer sequence has a channel mobility and a channel electron density as high as 9800 cm2/Vs and 6.1times1012 cm-2, respectively. To enable a maximum extrinsic transconductance gm, max of 2500 mS/mm the source resistance has been reduced to 0.1 Omegamiddotmm. An ft of 515 GHz was achieved for a 2 times 10 mum device. Based on this advanced 35 nm mHEMT… CONTINUE READING

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