310 GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection.

@article{Duan2012310GG,
  title={310 GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection.},
  author={N. Duan and Tsung-Yang Liow and Andy Eu-Jin Lim and Liang Ding and Guoqiang Lo},
  journal={Optics express},
  year={2012},
  volume={20 10},
  pages={11031-6}
}
We report a normal incidence Ge/Si avalanche photodiode with separate-absorption-charge-multiplication (SACM) structure by selective epitaxial growth. By proper design of charge and multiplication layers and by optimizing the electric field distribution in the depletion region to eliminate germanium impact-ionization at high gain, a high responsivity of 12… CONTINUE READING