3000V, 25A pulse power asymmetrical highly interdigitated SiC Thyristors

Abstract

A 3000V, 25A asymmetrical Silicon Carbide (SiC) Thyristor for pulse power applications is described here. It was fabricated on ultra low micropipe density 4H-SiC wafers. The device design, fabrication, wafer testing, packaging, static and dynamic characteristics are presented. The devices' chip area is 4mm×4mm, the yield after screening for blocking voltage… (More)

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