30-nm-gate AlGaN/GaN MIS-HFETs with 180 GHz fT


AlGaN/GaN heterostructure field-effect transistors (HFETs) are excellent candidates for high power and high frequency applications operating in the millimeter-wave frequency range. Therefore, it is important to clarify how fast GaN HFETs can operate, because this will be key information to judge the frequency limit of GaN HFET applications. We recently… (More)


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