30-mW-Class High-Power and High-Efficiency Blue Semipolar ( 10 1 1 ) InGaN / GaN Light-Emitting Diodes Obtained by Backside Roughening Technique

@inproceedings{Zhao201030mWClassHA,
  title={30-mW-Class High-Power and High-Efficiency Blue Semipolar ( 10 1 1 ) InGaN / GaN Light-Emitting Diodes Obtained by Backside Roughening Technique},
  author={Yuji Zhao and Junichi Sonoda and Chih-Chien Pan and Stuart Brinkley and Ingrid Koslow and Kenji Fujito and Hiroaki Ohta and Steven DenBaars and Shuji Nakamura},
  year={2010}
}
The first 30-mW-class semipolar blue light-emitting diode (LED) on a free-standing (10 1 1) GaN substrate has been demonstrated by using microscale periodic backside structures. The light extraction efficiency and corresponding output power were greatly enhanced, by up to 2.8-fold (bare chip) compare with conventional devices. At a driving current of 20mA, the LED showed an output power of 31.1mW and an external quantum efficiency of 54.7%. Semipolar GaN LED technology is now comparable to… CONTINUE READING