3-Dimensional SOI/CMOS IC's fabricated by beam recrystallization

@article{Kawamura19833DimensionalSI,
  title={3-Dimensional SOI/CMOS IC's fabricated by beam recrystallization},
  author={S. Kawamura and N. Sasaki and T. Iwai and R. Mukai and M. Nakano and M. Takagi},
  journal={1983 International Electron Devices Meeting},
  year={1983},
  pages={364-367}
}
  • S. Kawamura, N. Sasaki, +3 authors M. Takagi
  • Published 1983
  • Materials Science
  • 1983 International Electron Devices Meeting
  • A 3-Dimensional (3-D) CMOS integration with a structure, in which one type of transistor is fabricated directly above a transistor of the opposite type with separate gates and an insulator in between, has successfully been fabricated by using laser beam recrystallization. Seven-stage ring oscillators fabricated in the 3-D structure have a propagation delay of 430psec per stage at a supply voltage of 5V, which is comparable to that of single-crystal Si devices. This CMOS structure and the… CONTINUE READING
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