Corpus ID: 2514964

3-D Interconnects Using Cu Wafer Bonding : Technology and Applications

@inproceedings{Reif20043DIU,
  title={3-D Interconnects Using Cu Wafer Bonding : Technology and Applications},
  author={R. Reif and C. Tan and A. Fan and K. Chen and Shamik Das and N. Checka},
  year={2004}
}
  • R. Reif, C. Tan, +3 authors N. Checka
  • Published 2004
  • 3-D interconnects hold tremendous potential to reduce global interconnect latency and power dissipation. Moreover, it allows heterogeneous integration, i.e., monolithic integration of different technologies (e.g., logic, memory, and RF). This paper explores the opportunities and challenges of the 3-D integration approach by low temperature direct Cu-to-Cu wafer bonding. A thorough description of process integration will be given and key technological challenges will be highlighted. In… CONTINUE READING
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