2D MODELLING OF SILICON CHEMICAL VAPOR DEPOSITION IN AN IMPINGING JET REACTOR

@article{Wang19912DMO,
  title={2D MODELLING OF SILICON CHEMICAL VAPOR DEPOSITION IN AN IMPINGING JET REACTOR},
  author={Yao-Chun Wang and Charles Chaussavoine and Francis Teyssandier},
  journal={Journal De Physique Iv},
  year={1991},
  volume={02}
}
Numerical 2D modelling of silicon deposition in steady state conditions from a SiH4-H2 initial gas mixture is undertaken in an impinging jet configuration. Variable physical properties and dilute reactants in the carrier gas are assumed. The influence on both the deposition rate and the silicon deposition profile of transport phenomena and chemical reactions in the gas phase are studied. Homogeneous and heterogeneous reactions are considered with. three chemical species resulting from silane… Expand

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