2D Dopant Profiling on 4H Silicon Carbide P+N Junction by Scanning Capacitance and Scanning Electron Microscopy

@article{Buzzo20042DDP,
  title={2D Dopant Profiling on 4H Silicon Carbide P+N Junction by Scanning Capacitance and Scanning Electron Microscopy},
  author={Marco Buzzo and Markus Leicht and Thomas Schweinb{\"o}ck and Mauro Ciappa and Maria Stangoni and Wolfgang Fichtner},
  journal={Microelectronics Reliability},
  year={2004},
  volume={44},
  pages={1681-1686}
}

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