25Gb/s normal incident Ge/Si avalanche photodiode

@article{Huang201425GbsNI,
  title={25Gb/s normal incident Ge/Si avalanche photodiode},
  author={Mengyuan Huang and Tuo Shi and Pengfei Cai and Liangbo Wang and Su Nuan Li and Wang Chen and Ching-yin Hong and Dong Yi Pan},
  journal={2014 The European Conference on Optical Communication (ECOC)},
  year={2014},
  pages={1-3}
}
We developed world first 25Gb/s normal incident germanium silicon avalanche photodiode (Ge/Si APD) in a CMOS commercial foundry. The vertically illuminated Ge/Si APDs have a large 3-dB bandwidth (>18GHz) at a high gain (M=8) which is suitable for 100GBASE-ER4 application. 

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