25% drive current improvement for p-type multiple gate FET (MuGFET) devices by the introduction of recessed Si/sub 0.8/Ge/sub 0.2/ in the source and drain regions

Abstract

This paper shows, for the first time, the successful introduction of recessed, strained Si/sub 0.8/Ge/sub 0.2/ in the source and drain regions of pMOS MuGFET devices, improving the on-state current of these devices by 25%, at a fixed off-state condition. The improvement is shown to be a combined effect of compressive stress introduced along the channel, and… (More)

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