230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions

@article{Djayaprawira2005230RT,
  title={230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions},
  author={D. D. Djayaprawira and Kouichi Tsunekawa and Masaya Nagai and Hirofumi Maehara and S. Yamagata and Nobuharu Watanabe and Shinji Yuasa and Koji Ando},
  journal={INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005.},
  year={2005},
  pages={467-468}
}
The magnetoresistance ratio of 230% at room temperature is reported. This was achieved in spin-valve type magnetic tunnel junctions using MgO barrier layer and amorphous CoFeB ferromagnetic electrodes fabricated on thermally oxidized Si substrates. The amorphous CoFeB electrodes are of great advantage to the polycrystalline FeCo electrodes in achieving a high homogeneity in small 100 nm-sized MTJs. 
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