23.5 A 4Gb LPDDR2 STT-MRAM with compact 9F2 1T1MTJ cell and hierarchical bitline architecture


Spin-transfer torque magnetic RAM (STT-MRAM) is one of the most promising nonvolatile memories with guaranteed high-speed read and write operations. Along with performance improvements in the tunnel magnetoresistance (TMR) and the magnetic tunnel junction's (MTJ) required switching current, there have also been reports on high-capacity (up to tens of Mb… (More)
DOI: 10.1109/ISSCC.2017.7870428