220-GHz metamorphic HEMT amplifier MMICs for high-resolution imaging applications

  title={220-GHz metamorphic HEMT amplifier MMICs for high-resolution imaging applications},
  author={Axel Tessmann},
  journal={IEEE Journal of Solid-State Circuits},
  • Axel Tessmann
  • Published 2005 in IEEE Journal of Solid-State Circuits
In this paper, the development of 220-GHz low-noise amplifier (LNA) MMICs for use in high-resolution active and passive millimeter-wave imaging systems is presented. The amplifier circuits have been realized using a well-proven 0.1-/spl mu/m gate length and an advanced 0.05-/spl mu/m gate length InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor technology. Furthermore, coplanar circuit topology in combination with cascode transistors was applied, leading to a… CONTINUE READING
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