200W push-pull & 110W single-ended high performance RF-LDMOS transistors for WCDMA basestation applications

Abstract

The performance of a 200W push-pull device and a 110W single-ended device, both using state-of-the-art silicon RF-LDMOS die technology, is described. In the 2.1 GHz band with a two-carrier WCDMA signal applied and a supply voltage of 28V, -37 dBc IM3 and 25-26% drain efficiency is achieved at 38W and 19W respectively for the two devices. This combination of… (More)

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8 Figures and Tables