20-ps timing resolution with single-photon avalanche diodes

  title={20-ps timing resolution with single-photon avalanche diodes},
  author={Sergio Cova and Andrea Leonardo Lacaita and Massimo Ghioni and Giancarlo Ripamonti and Thomas A. Louis},
  journal={Review of Scientific Instruments},
Single photon avalanche diodes (SPADs) are avalanche photodiodes specifically designed for reverse bias operation above the breakdown voltage and used for detecting single optical photons. A new silicon epitaxial device structure was designed to give improved timing performance with respect to previous SPADs. Extensive tests were carried out in order to establish the timing resolution of the device in time correlated photon counting (TCPC). The timing resolution of the SPAD in terms of its full… 

Progress in Silicon Single-Photon Avalanche Diodes

Silicon single-photon avalanche diodes (SPADs) are nowadays a solid-state alternative to photomultiplier tubes (PMTs) in single-photon counting (SPC) and time-correlated single-photon counting

A view on progress of silicon single-photon avalanche diodes and quenching circuits

Silicon Single-Photon Avalanche-Diodes (SPAD) are nowadays considered a solid-state alternative to Photomultiplier Tubes (PMT) in single photon counting (SPC) and time-correlated single

A CMOS STI-Bound Single-Photon Avalanche Diode With 27-ps Timing Resolution and a Reduced Diffusion Tail

Single-photon avalanche diodes (SPADs) measure individual photons' time of arrival. Low detector jitter is required in many SPAD applications. This letter describes a method for significantly

Single photon avalanche diode for single molecule detection

A commercially available single photon avalanche photodiode in a passively quenched circuit is used with time‐correlated single photon counting modules to achieve subnanosecond time response together

τ-SPAD: a new red sensitive single-photon counting module

Single Photon Avalanche Diodes (SPADs) are valuable detectors in numerous photon counting applications in the fields of quantum physics, quantum communication, astronomy, metrology and biomedical

Single-photon detection beyond 1 µm: performance of commercially available InGaAs/lnP detectors.

The InGaAs/lnP avalanche photodiodes, designed for optical receivers and range finders, can be operated biased above the breakdown voltage, achieving single-photon sensitivity, and the performance of state-of-the-art detectors in the near IR is compared.

Single photon avalanche detectors: prospects of new quenching and gain mechanisms

Abstract While silicon single-photon avalanche diodes (SPAD) have reached very high detection efficiency and timing resolution, their use in fibre-optic communications, optical free space

Limits to the Timing Performance of Single Photon Avalanche Diodes

Semiconductors p-n junctions with uniform breakdown voltage are gaining acceptance as single-photon detectors in the visible and near infrared wavelength range in many applications, such as

Avalanche photodiodes for near-infrared photon counting

We report the photon-counting and timing performance of various Single-Photon Avalanche Diodes (SPADs) employed to detect single photons in the near-infrared wavelength range. Suitable Silicon



Towards picosecond resolution with single-photon avalanche diodes

Avalanche p–n photodiodes with uniform breakdown over the junction area are known to be capable of single‐photon detection. An experimental study has been performed on the temporal resolution of

Performance comparison of a single‐photon avalanche diode with a microchannel‐plate photomultiplier in time‐correlated single‐photon counting

A silicon single‐photon avalanche diode (SPAD) detector and a proximity‐focus‐type microchannel‐plate photomultiplier tube (MCP‐PMT) are compared with respect to their performance in time‐correlated

Active-Quenching and Gating Circuits for Single-Photon Avalanche Diodes (SPADs)

Single-photon detection by avalanche photodiodes with uniform breakdown over the junction area (single--photon avalanche diodes SPADs) is well known. The active quenching method, introduced by the

New silicon epitaxial avalanche diode for single-photon timing at room temperature

A new silicon single-photon avalanche diode (SPAD) with epitaxial structure is presented. The carrier diffusion effect, which has plagued the time response of previous SPADs, is strongly reduced. The

Improved timing resolution using small side‐on photomultipliers in single photon counting

The time‐resolution capabilities of two 28‐mm‐diam side‐on photomultiplier tubes, Hamamatsu R928 and RCA 931‐A, were studied by point illumination of the photocathode surface with the attenuated beam

Pulse fluorometry using simultaneous acquisition of fluorescence and excitation

We report a new method of measuring fluorescence lifetimes which uses the single‐photon technique and two detection channels with matched impulse response for simultaneous acquisition of fluorescence

Subnanosecond single photon counting fluorescence spectroscopy using synchronously pumped tunable dye laser excitation.

Subnanosecond fluorescence lifetimes of Rhodamine B with KI as a quencher have been determined by deconvolution of photons counted versus elapsed time using the method of moments; the shortest lifetime measured was 68 ps.

Mechanisms Contributing to the Noise Pulse Rate of Avalanche Diodes

The noise pulse rate of microplasmas and uniform avalanche diodes is determined by carrier generation within the space‐charge layer of the breakdown region, and by minority carrier diffusion to the