18.4 An 1.1V 68.2GB/s 8Gb Wide-IO2 DRAM with non-contact microbump I/O test scheme

@article{Yoon2016184A1,
  title={18.4 An 1.1V 68.2GB/s 8Gb Wide-IO2 DRAM with non-contact microbump I/O test scheme},
  author={Young Jun Yoon and Byung Deuk Jeon and Byung Soo Kim and Ki Up Kim and Tae Yong Lee and Nohhyup Kwak and Woo-Yeol Shin and Na Yeon Kim and Yunseok Hong and Kyeong Pil Kang and Dong Yoon Ka and Seong Ju Lee and Yong Sun Kim and Young Kyu Noh and Jaehoon Kim and Dong Keum Kang and Ho Uk Song and Hyeon Gon Kim and Jonghoon Oh},
  journal={2016 IEEE International Solid-State Circuits Conference (ISSCC)},
  year={2016},
  pages={320-322}
}
The emergence of the Internet of everything (IoE) demands high-performance, real-time multi-media and wideband networking in battery-operated mobile systems. For this reason, higher bandwidth and lower power mobile DRAMs are becoming increasingly critical. As promising candidates of next-generation mobile DRAM, the development of LPDDR4 [1] and wide-IO2… CONTINUE READING